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良い価格  オンライン

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Pockels セル Q スイッチ
Created with Pixso. LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

ブランド名: Crystro
モデル番号: PCR-2026-13-01
配達時間: 3~4週間
支払条件: T/T、ウェスタンユニオン、マネーグラム、ペイパル
詳細情報
起源の場所:
中国
口径、mm:
2.5/5/8/9
サイズ:
55×28×24mm
波長:
1064 nm
電極タイプ:
金/クロム
λ/2 電圧 (V@632.8 nm):
400/800
λ/4 電圧 (V@1064 nm):
1800-1900/2100
挿入損失:
< 3%
波面の歪み:
< λ/8@632.8 nm
絶滅の比率:
200:1(Φ1mmエリア)
ハイライト:

LN Pockels cells for Q-Switch

,

LiNbO3 Pockels cells with AR coating

,

Pockels cells low half wave voltage

製品説明

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

 

LN (LiNbO3) Pockels Cell, is a comprehensive and excellent pockels cell.The device is widely used in optical communication and optical waveguide technology and other fields. It features high electro-optical coefficient, non-hygroscopicity, wide transparency range, and excellent mechanical and physical properties, making it suitable for applications such as electro-optical modulators, modulated resonator wave voltage external laser beams, etc.

 

  Clear aperture Shell Size Half-wave lambda/4 Voltage
CPMLPC-09-1064nm-Q 9mm Dia.30mm x L26mm 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPMLPC-09-1064-Q-S 9mm

Square design

18 x 17 x 20mm
2100V λ/4 at 1064nm Electro-optic Q-Switching
CPLNPC-090925-3031-1064 9mm Dia.30 x 31mm

1700V λ/4 at 1064nm

Electro-optic Q-Switching
Transmittance >98% Transmission distortion of the crystal λ/6 @ 633nm
Insertion Loss 2% Crystal Flatness λ/8 @ 633nm
Recommended Qswitched Output Energy 100 mJ Extinction Ratio 300:1 - 500:1
Capacitance 5pF Xsurface with Au/Cr electrode  
Damage Threshold 00 MW/cm2 1064nm 10ns 10Hz (LN Q Switch    

 

Lithium niobate crystal is one of the most commonly used materials for Q-switches and phase modulators due to its high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 µm, and transverse mode operation.

 

By applying an electric field transverse to the direction of light propagation, the LiNbO3 cell can be configured to operate at a lower voltage than KD*P cells. The LiNbO3 Pockels Cell supports infrared wavelength operation up to 4.0 µm, making it an excellent choice for low-to-medium power solid-state laser (Er:YAG, Ho:YAG, Tm:YAG pulsed lasers) applications. Meanwhile, compared with conventional undoped LiNbO3, MgO-doped LiNbO3 has a significantly higher damage threshold.

 

 

Features

High-Speed Modulation Capability
Wide Transmittance Range
Low Driving Voltage
Excellent Physicochemical StabilityLN (LiNbO3) Pockels Cell

 

 

良い価格  オンライン

商品の詳細

Created with Pixso. ホーム Created with Pixso. 製品 Created with Pixso.
Pockels セル Q スイッチ
Created with Pixso. LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

ブランド名: Crystro
モデル番号: PCR-2026-13-01
支払条件: T/T、ウェスタンユニオン、マネーグラム、ペイパル
詳細情報
起源の場所:
中国
ブランド名:
Crystro
モデル番号:
PCR-2026-13-01
口径、mm:
2.5/5/8/9
サイズ:
55×28×24mm
波長:
1064 nm
電極タイプ:
金/クロム
λ/2 電圧 (V@632.8 nm):
400/800
λ/4 電圧 (V@1064 nm):
1800-1900/2100
挿入損失:
< 3%
波面の歪み:
< λ/8@632.8 nm
絶滅の比率:
200:1(Φ1mmエリア)
受渡し時間:
3~4週間
支払条件:
T/T、ウェスタンユニオン、マネーグラム、ペイパル
ハイライト:

LN Pockels cells for Q-Switch

,

LiNbO3 Pockels cells with AR coating

,

Pockels cells low half wave voltage

製品説明

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

 

LN (LiNbO3) Pockels Cell, is a comprehensive and excellent pockels cell.The device is widely used in optical communication and optical waveguide technology and other fields. It features high electro-optical coefficient, non-hygroscopicity, wide transparency range, and excellent mechanical and physical properties, making it suitable for applications such as electro-optical modulators, modulated resonator wave voltage external laser beams, etc.

 

  Clear aperture Shell Size Half-wave lambda/4 Voltage
CPMLPC-09-1064nm-Q 9mm Dia.30mm x L26mm 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPMLPC-09-1064-Q-S 9mm

Square design

18 x 17 x 20mm
2100V λ/4 at 1064nm Electro-optic Q-Switching
CPLNPC-090925-3031-1064 9mm Dia.30 x 31mm

1700V λ/4 at 1064nm

Electro-optic Q-Switching
Transmittance >98% Transmission distortion of the crystal λ/6 @ 633nm
Insertion Loss 2% Crystal Flatness λ/8 @ 633nm
Recommended Qswitched Output Energy 100 mJ Extinction Ratio 300:1 - 500:1
Capacitance 5pF Xsurface with Au/Cr electrode  
Damage Threshold 00 MW/cm2 1064nm 10ns 10Hz (LN Q Switch    

 

Lithium niobate crystal is one of the most commonly used materials for Q-switches and phase modulators due to its high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 µm, and transverse mode operation.

 

By applying an electric field transverse to the direction of light propagation, the LiNbO3 cell can be configured to operate at a lower voltage than KD*P cells. The LiNbO3 Pockels Cell supports infrared wavelength operation up to 4.0 µm, making it an excellent choice for low-to-medium power solid-state laser (Er:YAG, Ho:YAG, Tm:YAG pulsed lasers) applications. Meanwhile, compared with conventional undoped LiNbO3, MgO-doped LiNbO3 has a significantly higher damage threshold.

 

 

Features

High-Speed Modulation Capability
Wide Transmittance Range
Low Driving Voltage
Excellent Physicochemical StabilityLN (LiNbO3) Pockels Cell